TK10J80E mosfet equivalent, silicon n-channel mosfet.
(1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V.
* Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakag.
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